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2N5401(PNP)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Features
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.160v)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.6 A
PC Collector Power Dissipation 0.625 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO IE= -10A, IC=0 -5 V
Collector cut-off current ICBO VCB= -120 V, IE=0 -50 nA
Emitter cut-off current IEBO VEB= -3V, IC=0 -50 nA
hFE(1) VCE= -5V, IC=-1 mA 80
DC current gain hFE(2) VCE= -5V, IC= -10 mA 60 240
hFE(3) VCE= -5V, IC=-50 mA 50
Collector-emitter saturation voltage VCE(sat) IC= -50mA, IB= -5 mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC= -50mA, IB= -5 mA -1 V
VCE=-5V, IC=-10mA
Transition frequency fT f =30MHz
100 300 MHz
2N5401(PNP)
TO-92 Bipolar Transistors
Typical Characteristics