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2SB834(PNP)
TO-220 Transistor

TO-220
1. BASE

2. COLLECTOR

3. EMITTER
3
2
1
Features
Low Collector -emitter saturation voltage
VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A
DC current Gain
hFE =60-200@ IC=0.5A
Complementary to NPN 2SD880

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units Dimensions in inches and (millimeters)
VCBO Collector- Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -7 V
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 1.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC =-50mA,IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -7 V
Collector cut-off current ICBO VCB=-60V,IE=0 -100 A
Emitter cut-off current IEBO VEB=-7V,IC=0 -100 A
hFE(1)* VCE=-5V,IC=-500mA 60 200
DC current gain
hFE(2)* VCE=-5V,IC=-3A 20
Collector-emitter saturation voltage VCE(sat)* IC=-3A,IB=-0.3A -1 V
Base-emitter voltage VBE* VCE=-5V,IC=-500mA -1 V
Transition frequency fT VCE=-5V,IC=-500mA, f=1MHz 9 MHz
Turn-on Time ton 0.4 s
VCC=-30V,Ic=-2A,
Storage Time tstg 1.7 s
IB!=IB2=-0.2A
Turn-off Time toff 0.5 s
*Pulse test.
CLASSIFICATION OF hFE(1)
Rank O Y
Range 60-120 100-200
2SB834(PNP)
TO-220 Transistor

Typical Characteristics