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PHB29N08T
N-channel TrenchMOS standard level FET
Rev. 03 -- 13 October 2009 Product data sheet

1. Product profile

1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.

1.2 Features and benefits
High noise immunity due to high gate Low conduction losses due to low
threshold voltage on-state resistance

1.3 Applications
Industrial motor control

1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25