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File name: | phb29n08t.pdf [preview phb29n08t] |
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Mfg: | Philips |
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Descr: | . Electronic Components Datasheets Active components Transistors Philips phb29n08t.pdf |
Group: | Electronics > Components > Transistors |
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File name phb29n08t.pdf PHB29N08T N-channel TrenchMOS standard level FET Rev. 03 -- 13 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits High noise immunity due to high gate Low conduction losses due to low threshold voltage on-state resistance 1.3 Applications Industrial motor control 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj 25 |
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