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PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor
Rev. 02 -- 20 November 2009 Product data sheet




1. Product profile

1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS302PZ.

1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 20 V
IC collector current - - 5.8 A
ICM peak collector current single pulse; - - 11.6 A
tp 1 ms
RCEsat collector-emitter IC = 4 A; [1] - 30 43 m
saturation resistance IB = 200 mA

[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor



2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 base
4 2, 4
2 collector
3 emitter 1
4 collector
1 2 3 3
sym016




3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS302NZ SC-73 plastic surface-mounted package with increased heat SOT223
sink; 4 leads


4. Marking
Table 4. Marking codes
Type number Marking code
PBSS302NZ S302NZ




PBSS302NZ_2