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KSE350 PNP EPITAXIAL SILICON TRANSISTOR

HIGH COLLECTOR-EMITTER
SUSTAINING VOLTAGE TO-126
HIGH VOLTAGE GENERAL PURPOSE
APPLICATIONS
SUITABLE FOR TRANSFORMER
Complement to KSE340

ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector- Base Voltage VCBO -300 V
Collector-Emitter Voltage VCEO -300 V
Emitter- Base Voltage VEBO -5 V
Collector Current IC -500 mA
)
Collector Dissipation (T c=25 PC 20 W
Junction Temperature TJ 150
Storage Temperature T STG -65 ~ 150 1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (T C=25 )
Characteristic Symbol Test Condition Min Max Unit
Collector Emitter Sustaining Voltage VCEO(sus) IC = - 1mA, IB = 0 -300 V
Collector Cutoff Current ICBO VCB = - 300V, IE = 0 -100 uA
Emitter Cutoff Current IEBO VBE = - 3V, Ic = 0 -100 uA
DC Current Gain hFE VCE = - 10V, IC = - 50mA 30 240
KSE350 PNP EPITAXIAL SILICON TRANSISTOR