am81214-006.pdf part of ST am81214-006 am81214-006.pdf, . Electronic Components Datasheets Active components Transistors ST am81214-006.pdf text manual preview

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AM81214-006
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS

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. REFRACTORY/GOLD METALLIZATION

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EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY

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LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING

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OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 5.5 W MIN. WITH 10 dB GAIN
.310 x .310 2LF L (S064)
hermetically sealed
ORDER CODE BRANDING
AM81214-6 81214-6

DESCRIPTION PIN CONNECTION
The AM81214-006 device is a high power Class
C transistor specifically designed for L-Band Ra-
dar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 5:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire
bonding techniques ensure high reliability and
product consistency.
AM81214-006 is supplied in the grounded IM-
1. Collector 3. Emitter
PACTM Hermetic Metal/Ceramic package with in-
ternal input/output matching structures. 2. Base 4. Base

ABSOLUTE MAXIMUM RATINGS (T case = 25