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STW24NK55Z
N-channel 550 V - 0.18 - 23 A - TO-247
Zener-protected SuperMESHTM Power MOSFET
Features
Type VDSS RDS(on) ID Pw
STW24NK55Z 550 V <0.22 23 A 285 W
Extremely high dv/dt capability
100% avalanche tested 2
3
1
Gate charge minimized
TO-247
Very low intrinsic capacitances
Very good manufacturing repeatability
Application
Switching applications
Description Figure 1. Internal schematic diagram
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established
strip-based PowerMESHTM layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs.
Table 1. Device summary
Order code Marking Package Packaging
STW24NK55Z 24NK55Z TO-247 Tube
January 2008 Rev 1 1/12
www.st.com 12
Contents STW24NK55Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) .......................... 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STW24NK55Z Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 550 V
VGS Gate-source voltage