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PMGD780SN
Dual N-channel TrenchMOS standard level FET
Rev. 02 -- 19 April 2010 Product data sheet




1. Product profile

1.1 General description
Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

1.2 Features and benefits
Surface-mounted package Footprint 40 % smaller than SOT23
Standard level threshold voltage Fast switching
Low on-state resistance Dual device


1.3 Applications
Driver circuits Switching in portable appliances


1.4 Quick reference data
VDS 60 V ID 0.49 A
Ptot 0.41 W RDSon 920 m


2. Pinning information
Table 1. Pinning - SOT363 (SC-88), simplified outline and symbol
Pin Description Simplified outline Graphic symbol
1 source1 (S1)
6 5 4 D1 D2
2 gate1 (G1)
3 drain2 (D2)
4 source2 (S2)
5 gate2 (G2) 1 2 3

6 drain1 (D1) SOT363 (SC-88) S1 G1 S2 G2
msd901
NXP Semiconductors PMGD780SN
Dual N-channel TrenchMOS standard level FET



3. Ordering information
Table 2. Ordering information
Type number Package
Name Description Version
PMGD780SN SC-88 plastic surface-mounted package; 6 leads SOT363


4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25