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STD2NM60
STD2NM60-1
N-CHANNEL 600V - 2.8 - 2A DPAK/IPAK
Zener-Protected MDmeshTMPower MOSFET
TYPE VDSS RDS(on) ID
STD2NM60 600V < 3.2 2A
STD2NM60-1 600V < 3.2 2A
s TYPICAL RDS(on) = 2.8
s HIGH dv/dt AND AVALANCHE CAPABILITIES 3 3
2
s 100% AVALANCHE TESTED 1 1
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE DPAK IPAK
s TIGHT PROCESS CONTROL AND HIGH TO-252 TO-251
MANUFACTORING YIELDS
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro- INTERNAL SCHEMATIC DIAGRAM
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage