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2STC5242
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 230 V
Complementary to 2STA1962
Fast-switching speed
Typical fT = 30 MHz
Application 3
2
Audio power amplifier 1
TO-3P
Description
This device is a NPN transistor manufactured
using new BiT-LA (Bipolar Transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
2STC5242 2STC5242 TO-3P Tube
July 2008 Rev 3 1/9
www.st.com 9
Electrical ratings 2STC5242
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 230 V
VCEO Collector-emitter voltage (IB = 0) 230 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 15 A
ICM Collector peak current 30 A
Ptot Total dissipation at TC = 25