ST 2stc5242 free download

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2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHz Application 3 2 Audio power amplifier 1 TO-3P Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2STC5242 2STC5242 TO-3P Tube July 2008 Rev 3 1/9 www.st.com 9 Electrical ratings 2STC5242 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 230 V VCEO Collector-emitter voltage (IB = 0) 230 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 15 A ICM Collector peak current 30 A Ptot Total dissipation at TC = 25