stf26nm60n-h.pdf part of ST stf26nm60n-h stf26nm60n-h.pdf, . Electronic Components Datasheets Active components Transistors ST stf26nm60n-h.pdf text manual preview

Text preview for : stf26nm60n-h.pdf part of ST stf26nm60n-h . Electronic Components Datasheets Active components Transistors ST stf26nm60n-h.pdf

Back to : stf26nm60n-h.pdf | Home

STF26NM60N-H
N-channel 600 V, 0.135 20 A MDmeshTM II Power MOSFET
,
in TO-220FP

Features
RDS(on)
Type VDSS ID
max
STF26NM60N-H 600 V < 0.165 20 A

100% avalanche tested
3
Low input capacitance and gate charge 2
1
Low gate input resistance
TO-220FP
Application
Switching applications

Description
Figure 1. Internal schematic diagram
This series of devices implements second
generation MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.

Table 1. Device summary
Order codes Marking Package Packaging

STF26NM60N-H(1) 26NM60N TO-220FP Tube
1. The device meets ECOPACK