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KSC2500 NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER AMPLIFIER
LOW SATURATION TO-92L
ABSOLUTE MAXIMUM RATINGS (TA=25 )
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCES 30 V
Collector-Emitter Voltage VCBO 10 V
Emitter-Base Voltage VEBO 6 V
Collector Current (DC) IC 2 A
%Collector Current (Pulse) IC 5 A
Base Current IB 0.5 A
Collector Dissipation mW
&
PC 900
Junction Temperature TJ 150
Storage Temperature T STG -55 ~150 &
%PW 10ms, Duty Cycle 30% 1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (TA=25 )
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Cut-off Current ICBO VCB=30V, IE=0 100 nA
Emitter Cut-off Current IEBO VEB=6V, IC=0 100 nA
Collector-Emitter Breakdown Voltage BVCBO IC=10mA, IB=0 10 V
Emitter Base Breakdown Voltage BVEBO IE=1mA, IC=0 6 V
DC Current Gain hFE 1 VCE=1V, IC=0.5A 140 600
hFE 2 VCE=1V, IC=2A 70 200
Collector Emitter Saturation Voltage VCE (sat) IC=2A, IB=50mA 0.2 0.5 V
Base Emitter On Voltage VBE (on) VCE=1V, IC=2A 0.86 1.5 V
Current Gain Bandwidth Product fT VCE=1V, IC=0.5A 150 MHz
Output Capacitance COB VCB=10V, IE=0, f=1MHz 27 pF
hFE(1) CLASSIFICATION
Classification A B C D
hFE(1) 140-240 200-330 300-450 420-600
KSC2500 NPN EPITAXIAL SILICON TRANSISTOR