phb125n06l.pdf part of Philips phb125n06l phb125n06l.pdf, . Electronic Components Datasheets Active components Transistors Philips phb125n06l.pdf text manual preview

Text preview for : phb125n06l.pdf part of Philips phb125n06l . Electronic Components Datasheets Active components Transistors Philips phb125n06l.pdf

Back to : phb125n06l.pdf | Home

Philips Semiconductors Product specification

TrenchMOSTM transistor PHB125N06LT
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope suitable for surface VDS Drain-source voltage 55 V
mounting Using 'trench' technology ID Drain current (DC)1 75 A
the device features very low on-state Ptot Total power dissipation 250 W
resistance and has integral zener Tj Junction temperature 175