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KSA1175
TO-92S Transistor (PNP)
TO-92S
1. EMITTER
2. COLLECTOR
123 3. BASE
Features
Collector-Base Voltage : VCBO= -60V
Complement to KSC2785
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -0.15 A
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 0.25 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-0.1mA, IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A
DC current gain hFE VCE=-6V, IC=-1mA 40 700
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA
B -0.3 V
Base-emitter voltage VBE VCE=-6V, IC=-1mA -0.5 -0.8 V
Transition frequency fT VCE=-6V, IC=-10mA 50 MHz
Collector output capacitance Cob VCB=-10V, IE=0,f=1MHz 2.8 pF
VCE=-6V, IC=-0.3mA,
Noise figure NF 20 dB
f=100HZ, Rg=10K
CLASSIFICATION OF hFE
Rank R O Y G L
Range 40-80 70-140 120-240 200-400 350-700
Marking
KSA1175
TO-92S Transistor (PNP)
Typical Characteristics