am81214-030.pdf part of ST am81214-030 am81214-030.pdf, . Electronic Components Datasheets Active components Transistors ST am81214-030.pdf text manual preview

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AM81214-030
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
.
. REFRACTORY/GOLD METALLIZATION

.
.
EMITTER SITE BALLASTED
RUGGEDIZED VSWR :1

.
.
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING

.
.
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 26 W MIN. WITH 7.2 dB GAIN
.310 x .310 2LFL (S064)
hermetically sealed

ORDER CODE BRANDING
AM81214-030 81214-30

DESCRIPTION PIN CONNECTION
The AM81214-030 device is a high power transistor
specifically designed for L-Band Radar pulsed
driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding :1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM81214-030 is supplied in the IMPACTM Her-
metic M etal/Ceramic package with i nternal 1. Collector 3. Emitter
Input/Output matching structures. 2. Base 4. Base

ABSOLUTE MAXIMUM RATINGS (Tcase = 25