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MMBT3906
SOT-23 Transistor(PNP)
1. BASE
2. EMITTER SOT-23
3. COLLECTOR
Features
As complementary type, the NPN transistor
MMBT3904 is Recommended
Epitaxial planar die construction
MARKING: 2A
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.2 A
PC Collector Power Dissipation 0.3 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -10A,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB= -40V, E=0 -0.1 A
Collector cut-off current ICEX VCE=-30V,VBE(off)=-3V -50 nA
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
hFE(1) VCE=-1V, IC=-10mA 100 300
DC current gain hFE(2) VCE= -1V, IC=-50mA 60
hFE(3) VCE= -1V, IC=-100mA 30
Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.4 V
Base-emitter saturation voltage VBE(sat) IC=- 50mA, IB=- 5mA -0.95 V
Transition frequency fT VCE=-20V, IC=-10mA, f=100MHz 250 MHz
Delay Time td VCC=-3.0V,VBE=-0.5V 35 nS
Rise Time tr IC=-10mA,IB1=-1.0mA 35 nS
Storage Time ts VCC=-3.0V,IC=-10mA 225 nS
Fall Time tf IB1=IB2=-1.0mA 75 nS
CLASSIFICATION OF hFE1
Rank O Y
Range 100-200 200-300
MMBT3906
SOT-23 Transistor(PNP)
Typical Characteristics
MMBT3906
SOT-23 Transistor(PNP)