std2nb60.pdf part of ST std2nb60 std2nb60.pdf, . Electronic Components Datasheets Active components Transistors ST std2nb60.pdf text manual preview

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STD2NB60
N - CHANNEL ENHANCEMENT MODE
PowerMESHTM MOSFET

TYPE V DSS R DS(on) ID
STD2NB60 600 V < 3.6 2.6 A
s TYPICAL RDS(on) = 3.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED 3
2 3
DESCRIPTION 1 1
Using the latest high voltage MESH OVERLAYTM
process, SGS-Thomson has designed an
advanced family of power MOSFETs with IPAK DPAK
outstanding performances. The new patent TO-251 TO-252
pending strip layout coupled with the Company's (Suffix "-1") (Suffix "T4")
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V DS Drain-source Voltage (V GS = 0) 600 V
V DGR Drain- gate Voltage (R GS = 20 k) 600 V
V GS Gate-source Voltage