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SEMICONDUCTOR KMB7D1DP30QA
TECHNICAL DATA Dual P-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and Load H
Switch. T
D P G L
FEATURES A
DIM MILLIMETERS
VDSS=-30V, ID=-7.1A A _
4.85 + 0.2
Drain-Source ON Resistance B1 _
3.94 + 0.2
8 5 B2 _
6.02 + 0.3
RDS(ON)=25m (Max.) @ VGS=-10V D _
0.4 + 0.1
RDS(ON)=41m (Max.) @ VGS=-4.5V B1 B2 G 0.15+0.1/-0.05
H _
1.63 + 0.2
Super Hige Dense Cell Design 1 4 _
L 0.65 + 0.2
P 1.27
T 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch UNIT FLP-8
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS 20 V
DC@TA=25 -7.1
ID
Drain Current DC@TA=70 -5.7 A
Pulsed IDP -40
Drain-Source-Diode Forward Current IS -1.7 A
KMB7D1DP
TA=25 1.1
Drain Power Dissipation PD W 30QA
TA=70 0.7
705
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA 110 /W
Note : Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
S1 1 8 D1 1 8
G1 2 7 D1 2 7
S2 3 6
3 6 D2
G2 4 5 D2 4 5
2007. 4. 17 Revision No : 0 1/5
KMB7D1DP30QA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS IDS=-10 A, VGS=0V, -30 - - V
VGS=0V, VDS=-30V - - -1
Drain Cut-off Current IDSS A
VGS=0V, VDS=-30V, Tj=55 - - -25
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -1 - -3 V
VGS=-10V, ID=-7.1A - 20 25
Drain-Source ON Resistance RDS(ON)* m
VGS=-4.5V, ID=-5.5A - 33 41
Forward Transconductance gfs* VDS=-10V, ID=-7.1A - 20 - S
Dynamic
Input Capaclitance Ciss - 1550 -
Ouput Capacitance Coss VDS=15V, f=1MHz, VGS=OV - 420 - pF
Reverse Transfer Capacitance Crss - 380 -
Total Gate Charge Qg* - 33 50
Gate-Source Charge Qgs* VDS=-15V, VGS=-10V, ID=-7.1A - 5.4 - nC
Gate-Drain Charge Qgd* - 8.9 -
Turn-On Delay Time td(on)* - 9 15
Turn-On Rise Time tr* VDD=-15V, VGS=-10V - 12 20
ns
Turn-Off Delay Time td(off)* ID=-1A, RG=6 - 60 90
Turn-Off Fall Time tf* - 34 50
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IDR=-1.7A - -0.8 -1.2 V
* : Pulse Test : Pulse width <300 , Duty cycle < 2%
2007. 4. 17 Revision No : 0 2/5
KMB7D1DP30QA
Fig1. VDS - ID Fig2. RDS(ON) - ID
Drain Source On Resistance RDS(ON) ()
200
Common Source
10V 4.5V Tc=25 C
4.0V Pulse Test
Drain Current ID (A)
3.5V
100
VGS=4.5V
3.0V
4
2.5V VGS=10V
VGS=2.0V
0
0.4 0 4 8 12 16 20
Drain - Source Voltage VDS (V) Drain - Current ID (A)
Fig3. VGS - ID Fig4. RDS(on) - Tj
40 Common Source 50
Common Source
VDS=5V VDS=10V, ID=7A
On-Resistance RDS(ON) (m)
Normalized Drain-Source
Pulse Test Pulse Test
40
Drain Current ID (A)
30
30
20
20
10 25 C
10
125 C
-55 C
0 0
0 1 2 3 4 5 -75 -50 -25 0 25 50 75 100 125 150
Gate-Source Volatage VGS (V) Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig6. IS-VSDF
5 Common Source 10
Gate Threshold Voltage Vth (V)
VGS=VDS
D I =250