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BULD118-1
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
APPLICATIONS:
3
s ELECTRONIC BALLASTS FOR 2
FLUORESCENT LIGHTING 1
s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION IPAK
The device is manufactured using high voltage (TO-251)
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA. INTERNAL SCHEMATIC DIAGRAM
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CES Collector-Emitter Voltage (V BE = 0) 700 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 2 A
I CM Collector Peak Current (tp < 5 ms) 4 A
IB Base Current 1 A
I BM Base Peak Current (t p < 5 ms) 2 A
o
P t ot Total Dissipation at T c = 25 C 20 W
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
July 1997 1/7
BULD118-1
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-Case Max 6.25 C/W
o
R t hj- amb Thermal Resistance Junction-Ambient Max 100 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 700 V 100