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STW6NC90Z
N-CHANNEL 900V - 2.1 - 5.2A TO-247
Zener-Protected PowerMESHTMIII MOSFET

TYPE VDSS RDS(on) ID

STW6NC90Z 900 V < 2.5 5.2A
s TYPICAL RDS(on) = 2.1
s EXTREMELY HIGH dv/dt CAPABILITY
s GATE-TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
TO-247
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.

APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 900 V
VDGR Drain-gate Voltage (RGS = 20 k) 900 V
VGS Gate- source Voltage