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BU810
MEDIUM VOLTAGE NPN FAST-SWITCHING
DARLINGTON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN DARLINGTON
s LOW BASE-DRIVE REQUIREMENTS
s FAST SWITCHING SPEED
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s HORIZONTAL DEFLECTION FOR 3
MONOCHROME TVs 2
1
s GENERAL PURPOSE SWITCHING
DESCRIPTION TO-220
The BU810 is a Multiepitaxial Planar NPN
Transistor in TO-220 package. It is intended for
use in high frequency and efficency converters,
switching regulators and motor control.
INTERNAL SCHEMATIC DIAGRAM
R = 200
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) 600 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 7 A
I CM Collector Peak Current 10 A
IB Base Current 2 A
P tot Total Power Dissipation at T case 25 C
o
75 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Junction Temperature 150 C
June 1997 1/4
BU810
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.66 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CES Collector Cut-off V CE = 600 V 200