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CEG8208
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
D D
20V, 6.5A, RDS(ON) = 22m @VGS = 4.5V.
RDS(ON) = 32m @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON). *1K *1K
G1 G2
High power and current handing capability.
Lead free product is acquired.
S1 S2
TSSOP-8 for Surface Mount Package. *Typical value by design
ESD Protected: HBM 2000 V
G2
S2
S2
D G1 D 1 8 D
S1
S1 S1 2 7 S2
D
TSSOP-8 S1 3 6 S2
G1 4 5 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS