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KSC5021 NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING : tf = 0.1 I (Typ) TO-220
WIDE SOA

ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 800 V
Collector-Emitter Voltage VCEO 500 V
Emitter-Base Voltage VEBO 7 V
Collector Current (DC) IC 5 A
Collector Current (Pulse) IC 10 A
Base Current IB 2 A
)
Collector Dissipation ( T C=25 PC 50 W 1.Base 2.Collector 3.Emitter
Junction Temperature TJ 150
Storage Temperature T STG -55 ~ 150

ELECTRICAL CHARACTERISTICS (Tc =25)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 800 V
Collector Emitter Breakdown Voltage BVCEO IC = 5mA, RBE = 500 V
Emitter Base Breakdown Voltage BVEBO IE = 1mA, IC = 0 7 V
Collector Emitter Sustaining Voltage VCEX(sus) IC = 2.5A, IB1 = -IB2 = 1A 500 V
L = 1mH, Clamped
Collector Cutoff Current ICBO VCB = 500V, IE = 0 10 uA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 10 uA
DC Current Gain hFE1 VCE = 5V, IC = 0.6A 15 50
hFE2 VCE = 5V, IC = 3A 8
Collector Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 0.6A 1 V
Base Emitter Saturation Voltage VBE(sat) IC = 3A, IB = 0.6A 1.5 V
Output Capacitance COB VCB = 10V, IE = 0, f = 1MHz 80 pF
Current Gain Bandwidth Product fT VCE = 10V, IC = 0.6A 18 MHz
Turn On Time tON VCC = 200V 0.5 uS
Storage Time tS 5IB1 = -2.5IB2 = IC = 4A 3 uS
Fall Time tF RL = 50