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STP20NM60 - STP20NM60FP
STB20NM60 STB20NM60-1
N-CHANNEL 600V - 0.25 - 20A TO-220/FP/D2PAK/I2PAK
MDmeshTMPower MOSFET
TYPE VDSS RDS(on) ID
STP20NM60 600 V < 0.29 20 A
STP20NM60FP 600 V < 0.29 20 A
STB20NM60 600 V < 0.29 20 A 3 3
STB20NM60-1 600 V < 0.29 20 A 1
2 1
2
s TYPICAL RDS(on) = 0.25 TO-220 TO-220FP
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE CHARGE
s LOW GATE INPUT RESISTANCE 3
3
1
12
DESCRIPTION I2PAK D2PAK
The MDmeshTM is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company's PowerMESHTM horizontal layout. The INTERNAL SCHEMATIC DIAGRAM
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company's propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP(B)20NM60(-1) STP20NM60FP
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage