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2N7008

N-Channel Enhancement-Mode
Vertical DMOS FETs

Features General Description
Free from secondary breakdown The Supertex 2N7008 is an enhancement-mode (normally-
Low power drive requirement off) transistor that utilizes a vertical DMOS structure
and Supertex's well-proven silicon-gate manufacturing
Ease of paralleling
process. This combination produces a device with the
Low CISS and fast switching speeds power handling capabilities of bipolar transistors, and the
Excellent thermal stability high input impedance and positive temperature coefficient
Integral source-drain diode inherent in MOS devices. Characteristic of all MOS
High input impedance and high gain structures, this device is free from thermal runaway and
Complementary N- and P-Channel devices thermally-induced secondary breakdown.

Applications Supertex's vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
Motor controls very low threshold voltage, high breakdown voltage, high
Converters input impedance, low input capacitance, and fast switching
Amplifiers speeds are desired.
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)

Ordering Information
BVDSS/BVDGS RDS(ON) ID(ON)
Device Package Option (max) (min)
(V) () (mA)

2N7008-G TO-92 60 7.5 500
-G indicates package is RoHS compliant (`Green')

Absolute Maximum Ratings Pin Configuration
Parameter Value
Drain-to-source voltage BVDSS
SOURCE

Drain-to-gate voltage BVDGS DRAIN

Gate-to-source voltage