Supertex 2n7008 free download

File name 2n7008.pdf

2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown The Supertex 2N7008 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with the Low CISS and fast switching speeds power handling capabilities of bipolar transistors, and the Excellent thermal stability high input impedance and positive temperature coefficient Integral source-drain diode inherent in MOS devices. Characteristic of all MOS High input impedance and high gain structures, this device is free from thermal runaway and Complementary N- and P-Channel devices thermally-induced secondary breakdown. Applications Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where Motor controls very low threshold voltage, high breakdown voltage, high Converters input impedance, low input capacitance, and fast switching Amplifiers speeds are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information BVDSS/BVDGS RDS(ON) ID(ON) Device Package Option (max) (min) (V) () (mA) 2N7008-G TO-92 60 7.5 500 -G indicates package is RoHS compliant (`Green') Absolute Maximum Ratings