Supertex vp2106 free download

File name vp2106.pdf

VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP2106 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure Ease of paralleling and Supertex's well-proven silicon-gate manufacturing Low CISS and fast switching speeds process. This combination produces a device with the High input impedance and high gain power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient Excellent thermal stability inherent in MOS devices. Characteristic of all MOS Integral source-to-drain diode structures, this device is free from thermal runaway and Applications thermally-induced secondary breakdown. Motor controls Supertex's vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where Amplifiers very low threshold voltage, high breakdown voltage, high Switches input impedance, low input capacitance, and fast switching Power supply circuits speeds are desired. Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Option RDS(ON) ID(ON) BVDSS/BVDGS Device (max) (min) TO-92