std4n20.pdf part of ST std4n20 std4n20.pdf, . Electronic Components Datasheets Active components Transistors ST std4n20.pdf text manual preview

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STD4N20
N-CHANNEL 200V - 1.2 - 4A DPAK/IPAK
MESH OVERLAYTM MOSFET

TYPE VDSS RDS(on) ID

STD4N20 200 V < 1.5 4A
s TYPICAL RDS(on) = 1.2
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3 3
2
s ADD SUFFIX "T4" FOR OREDERING IN TAPE & 1 1
REEL
DPAK IPAK
DESCRIPTION TO-252 TO-251
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company's proprietary edge termina- INTERNAL SCHEMATIC DIAGRAM
tion structure, makes it suitable in coverters for
lighting applications.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 200 V
VDGR Drain-gate Voltage (RGS = 20 k) 200 V
VGS Gate- source Voltage