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STL20NM20N
N-CHANNEL 200V - 0.088 - 20A PowerFLATTM
ULTRA LOW GATE CHARGE MDmeshTM II MOSFET
Table 1: General Features Figure 1: Package
TYPE VDSS RDS(on) ID
STL20NM20N 200 V < 0.105 20 A
WORLDWIDE LOWEST GATE CHARGE
TYPICAL RDS(on) = 0.088
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE (1mm MAX)
VERY LOW THERMAL RESISTANCE
s)
LOW GATE RESISTANCE
PowerFlat (6x5)
LOW INPUT CAPACITANCE (Chip Scale Package)
t(
uc
HIGH dv/dt and AVALANCHE CAPABILITIES
DESCRIPTION
d
This 200V MOSFET with a new advanced layout
brings all unique advantages of MDmesh technol-
P ro
te
ogy to lower voltages. The device exhibits world- Figure 2: Internal Schematic Diagram
wide lowest gate charge for any given on-
resistance.Its use is therefore ideal as primary
le
so
switch in isolated DC-DC converters for Telecom
and Computer applications.Used in combination
Ob
with secondary-side low-voltage STripFETTM prod-
ucts, it contributes to reducing losses and boosting
efficiency.The new PowerFLATTM package allows
-
s)
a significant reduction in board space without com-
t(
promising performance.
APPLICATIONS
d uc
ro
The MDmeshTM family is very suitable for increas-
P
ing power density allowing system miniaturization
and higher efficiencies
e
let
so
Table 2: Order Codes
Ob SALES TYPE
STL20NM20N
MARKING
L20NM20N
PACKAGE
PowerFLATTM(6x5)
PACKAGING
TAPE & REEL
Rev. 6
January 2006 1/10
STL20NM20N
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 200 V
VDGR Drain-gate Voltage (RGS = 20 k) 200 V
VGS Gate- source Voltage