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SEMICONDUCTOR KMB8D0P30Q
TECHNICAL DATA P-Ch Trench MOSFET
General Description
It s mainly suitable for battery power management in cell phone,
PDA and notebook
H
T
D P G L
FEATURES
VDSS=-30V, ID=-8A.
Low Drain-Source ON Resistance. A
: RDS(ON)=20m (Max.) @ VGS=-10V DIM MILLIMETERS
A 5.05+0.25/-0.20
: RDS(ON)=35m (Max.) @ VGS=-4.5V _
B1 3.90 + 0.3
Super High Dense Cell Design for Extremely Low RDS(ON) 8 5 B2 _
6.00 + 0.4
D _
0.42 + 0.1
B1 B2 G _
0.15 + 0.1
H _
1.4 + 0.2
1 4 L _
0.5 + 0.2
P 1.27 Typ.
T _
0.20 + 0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT FLP-8 (1)
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS 25 V
DC ID * -8
Drain Current A
Pulsed (note1) IDP -40
Source-Drain Diode Current IS* -1.7 A
Drain Power Dissipation PD * 2.5 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA* 50 /W
* : Surface Mounted on 1 1 FR4 Board, t 5sec.
2007. 3. 22 Revision No : 1 1/5
KMB8D0P30Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=-250 A, VGS=0V, -30 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=-24V - - -1 A
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -1.0 -1.6 -3 V
VGS=-10V, ID=-8.0A (Note 1) - 15 20
Drain-Source ON Resistance RDS(ON) m
VGS=-4.5V, ID=-5.0A (Note 1) - 22 35
ON State Drain Current ID(ON) VGS=-10V, VDS=-5V (Note 1) -20 - - A
Forward Transconductance gfs VDS=-15V, ID=-8.0A (Note 1) - 6 - S
Source-Drain Diode Forward Voltage VSD IS=-1.7A, VGS=0V (Note 1) - -0.74 -1.2 V
Dynamic (Note 2)
Input Capacitance Ciss - 1199 -
Output Capacitance Coss VDS=-15V, VGS=0V, f=1.0MHz - 362 - pF
Reverse transfer Capacitance Crss - 137 -
VDS=-15V, ID=-8A,
- 33.6 -
VGS=-10V (Fig.1)
Total Gate Charge Qg
VDS=-15V, ID=-8A,
- 17.3 - nC
VGS=-4.5V (Fig.1)
Gate-Source Charge Qgs VDS=-15V, ID=-8A, - 3.3 -
Gate-Drain Charge Qgd VGS=-10V (Fig.1) - 8.1 -
Turn-on Delay time td(on) - 17.6 -
Turn-on Rise time tr VDD=-15V, ID=-1A, - 17.4 -
ns
Turn-off Delay time td(off) VGS=-10V, RG=6 (Fig.2) - 169 -
Turn-off Fall time tf - 95.4 -
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.
Note 2) Guaranteed by design. Not subject to production testing.
2007. 3. 22 Revision No : 1 2/5
KMB8D0P30Q
2007. 3. 22 Revision No : 1 3/5
KMB8D0P30Q
2007. 3. 22 Revision No : 1 4/5
KMB8D0P30Q
2007. 3. 22 Revision No : 1 5/5