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STB40NE03L-20
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZETM " POWER MOSFET
TYPE V DSS R DS(on) ID

s TYPICAL RDS(on) = 0.014
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE A 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION 3
s FOR THROUGH-HOLE VERSION CONTACT 1
SALES OFFICE
D2PAK
DESCRIPTION TO-263
This Power MOSFET is the latest development of (suffix "T4")
SGS-THOMSON unique "Single Feature SizeTM "
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark- INTERNAL SCHEMATIC DIAGRAM
able manufacturing reproducibility.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (VGS = 0) 30 V
V DGR Drain- gate Voltage (RGS = 20 k) 30 V
V GS Gate-source Voltage