2sc2216.pdf part of LGE 2sc2216 2sc2216.pdf, . Electronic Components Datasheets Active components Transistors LGE 2sc2216.pdf text manual preview

Text preview for : 2sc2216.pdf part of LGE 2sc2216 . Electronic Components Datasheets Active components Transistors LGE 2sc2216.pdf

Back to : 2sc2216.pdf | Home

2SC2216(NPN)
TO-92 Bipolar Transistors

1. BASE TO-92
2. EMITTER

3. COLLECTOR

Features
Amplifier dissipation NPN Silicon

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 4 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous 50 mA
PC Collector Dissipation 300 mW
TJ Junction Temperature 125
Tstg Storage Temperature -55-125

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 4 V
Collector cut-off current ICBO VCB=50 V IE=0 0.1 A
Emitter cut-off current IEBO VEB= 3 V, IC=0 0.1 A
DC current gain hFE VCE=12.5V, IC=12.5 mA 40 140
Collector-emitter saturation voltage VCE (sat) IC= 15mA, IB=1.5 mA 0.2 V
Bass-emitter saturation voltage VBE (sat) IC= 15mA, IB=1.5 mA 1.5 V
Transition frequency fT VCE=12.5 V, IC=12.5mA 300 MHz
VCB=10V,IE=0,
Collector output capacitance Cob 2.0 pF
f=30MHz
2SC2216(NPN)
TO-92 Bipolar Transistors

Typical Characteristics