am81719-040.pdf part of ST am81719-040 am81719-040.pdf, . Electronic Components Datasheets Active components Transistors ST am81719-040.pdf text manual preview

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AM81719-040
RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS
PRELIMINARY DAT A

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. REFRACTORY/GOLD METALLIZATION

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EMITTER SITE BALLASTED
INPUT/OUTPUT MATCHING

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OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 40 W MIN. WITH 7 dB GAIN
.400 X .400 2 LF L (M228)
hermetically sealed

ORDER CO DE BRANDING
AM81719-040 81719-40

PIN CONNECTION

DESCRIPTION
The AM81719-040 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the
1.75 - 1.85 GHz frequency range.
An emitter-ballasted refractory-gold overlay die
geometry with computerized automatic wire-
bonding is employed to ensure long-term reliabil- 1. Collector 3. Emitter
ity and product consistency. 2. Base 4. Base

ABSOLUTE MAXIMUM RATINGS (Tcase = 25