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PBHV8115Z
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 02 -- 9 December 2008 Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115Z.
1.2 Features
I High voltage
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I AEC-Q101 qualified
I Medium power SMD plastic package
1.3 Applications
I LED driver for LED chain module
I LCD backlighting
I High Intensity Discharge (HID) front lighting
I Automotive motor management
I Hook switch for wired telecom
I Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 150 V
IC collector current - - 1 A
hFE DC current gain VCE = 10 V; 100 250 -
IC = 50 mA
NXP Semiconductors PBHV8115Z
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
4 2, 4
2 collector
3 emitter 1
4 collector
1 2 3 3
sym016
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBHV8115Z SC-73 plastic surface-mounted package with increased SOT223
heatsink; 4 leads
4. Marking
Table 4. Marking codes
Type number Marking code
PBHV8115Z V8115Z
PBHV8115Z_2