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BF1216
Dual N-channel dual gate MOSFET
Rev. 01 -- 29 April 2010 Product data sheet

1. Product profile

1.1 General description
The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads.

The source and substrate are interconnected. Internal bias circuits enable DC stabilization
and very good cross modulation performance during AGC. Integrated diodes between the
gates and source protect against excessive input voltage surges. The transistor is
available as a SOT363 micro-miniature plastic package.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features and benefits
Two low noise gain controlled amplifiers in a single package; both with a partly
integrated bias
Superior cross modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio

1.3 Applications
Gain controlled low noise amplifiers for VHF and UHF applications running on a 5 V
supply voltage
digital and analog television tuners
professional communication equipment
NXP Semiconductors BF1216
Dual N-channel dual gate MOSFET

1.4 Quick reference data
Table 1. Quick reference data for amplifier A and B
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage DC - - 6 V
ID drain current DC - - 30 mA
Ptot total power dissipation Tsp 107