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STS20N3LLH6
N-channel 30 V, 0.004 , 20 A, SO-8
STripFETTM VI DeepGATETM Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STS20N3LLH6 30 V 0.0047 20 A
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness SO-8
Low gate drive power losses
Very low switching gate charge
Application
Switching applications
Figure 1. Internal schematic diagram
Description
This product utilizes the 6th generation of design
rules of ST's proprietary STripFETTM technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
Table 1. Device summary
Order code Marking Package Packaging
STS20N3LLH6 20G3L SO-8 Tape and reel
March 2010 Doc ID 15528 Rev 2 1/13
www.st.com 13
Contents STS20N3LLH6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 15528 Rev 2
STS20N3LLH6 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS(1) Gate-source voltage