am81719.pdf part of ST am81719 am81719.pdf, . Electronic Components Datasheets Active components Transistors ST am81719.pdf text manual preview

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AM81719-030
RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS

.
. REFRACTORY/GOLD METALLIZATION
PRELIMINARY DATA

.
.
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE

.
.
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY

. METAL/CERAMIC HERMETIC PACKAGE
P OUT = 28 W MIN. WITH 6.7 dB GAIN .400 SQ 2LFL (M147)
hermetically sealed
ORDER CODE BRANDING
AM81719-030 81719-030

PIN CONNECTION

DESCRIPTION
The AM81719-030 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the 1.75
- 1.85 GHz frequency range.
An emitter site ballasted refractory/gold overlay
die geometry computerized automatic wire bonding
is employed to ensure long term reliability and
product consistency.
1. Collector 3. Emitter
AM81719-030 is supplied in the industry-standard 2. Base 4. Base
AMPACTM hermetic metal/ceramic package.

ABSOLUTE MAXIMUM RATINGS (T case = 25