2n2060.pdf part of Microsemi 2n2060 2n2060.pdf, . Electronic Components Datasheets Active components Transistors Microsemi 2n2060.pdf text manual preview

Text preview for : 2n2060.pdf part of Microsemi 2n2060 . Electronic Components Datasheets Active components Transistors Microsemi 2n2060.pdf

Back to : 2n2060.pdf | Home

TECHNICAL DATA

UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270

Devices Qualified Level
JAN
2N2060
JANTX
2N2060L
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N2060 Unit
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Collector Current IC 500 mAdc
One Both
Section Sections
Total Power Dissipation @ TA = +250C (1) 540 600 mW
PT
@ TC = +250C (2) 1.5 2.12 W
0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C
0 0 0
1) Derate linearly 3.08 mW/ C for TA > 25 C for one section, 3.48 mW/ C for both sections TO-78*
2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(3)
V(BR)CER 80 Vdc
RBE 10 , IC = 10 mAdc
Collector-Emitter Breakdown Voltage
V(BR)CEO 60 Vdc
IC = 30 mAdc
Collector-Base Cutoff Current
VCB = 100 Vdc ICBO 10