Microsemi 2n2060 free download

File name 2n2060.pdf

TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices Qualified Level JAN 2N2060 JANTX 2N2060L JANTXV MAXIMUM RATINGS Ratings Symbol 2N2060 Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 7.0 Vdc Collector Current IC 500 mAdc One Both Section Sections Total Power Dissipation @ TA = +250C (1) 540 600 mW PT @ TC = +250C (2) 1.5 2.12 W 0 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C 0 0 0 1) Derate linearly 3.08 mW/ C for TA > 25 C for one section, 3.48 mW/ C for both sections TO-78* 2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) V(BR)CER 80 Vdc RBE 10 , IC = 10 mAdc Collector-Emitter Breakdown Voltage V(BR)CEO 60 Vdc IC = 30 mAdc Collector-Base Cutoff Current VCB = 100 Vdc ICBO 10