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PMF3800SN
N-channel TrenchMOS standard level FET
Rev. 03 -- 11 November 2009 Product data sheet



1. Product profile

1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.

1.2 Features and benefits
Electrostatically robust due to Suitable for high frequency
integrated protection diodes applications due to fast switching
Saves PCB space due to small characteristics
footprint Suitable for logic level gate drive
sources

1.3 Applications
High-speed line drivers Relay drivers

1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25