Philips pmf3800sn free download

File name pmf3800sn.pdf

PMF3800SN N-channel TrenchMOS standard level FET Rev. 03 -- 11 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Electrostatically robust due to Suitable for high frequency integrated protection diodes applications due to fast switching Saves PCB space due to small characteristics footprint Suitable for logic level gate drive sources 1.3 Applications High-speed line drivers Relay drivers 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj 25