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TECHNICAL DATA

NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455

Devices Qualified Level Devices Qualified Level
JAN
JAN
2N5666 2N5667 JANTX
2N5664 2N5665 JANTX
2N5666S 2N5667S JANTXV
JANTXV
JANS

MAXIMUM RATINGS
2N5664 2N5665
Ratings Symbol 2N5666, S 2N5667, S Unit
Collector-Emitter Voltage VCEO 200 300 Vdc
Collector-Base Voltage 250 400 Vdc TO-66* (TO-213AA)
VCBO
6.0 Vdc
2N5664, 2N5665
Emitter-Base Voltage VEBO
Base Current IB 1.0 Adc
Collector Current IC 5.0 Adc
2N5664 2N5666, S
2N5665 2N5667, S
Total Power Dissipation @ TA = +250C PT 2.5 (1) 1.2 (2) W TO-5*
@ TC = +1000C 30 (3)
15 (4) W 2N5666, 2N5667
0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C
1) Derate linearly 14.3 mW/0C for TA > +250C
2) Derate linearly 6.9 mW/0C for TA > +250C
3) Derate linearly 300 mW/0C for TC >+1000C
4) Derate linearly 150 mW/0C for TC > +1000C
TO-39* (TO-205AD)
2N5666S, 2N5667S
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc 2N5664, 2N5666, S V(BR)CER 250 Vdc
2N5665, 2N5667, S 400
Emitter-Base Breakdown Voltage
IE = 10