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STGW35HF60WD
35 A, 600 V ultra fast IGBT
Features
Improved Eoff at elevated temperature
Minimal tail current
Low conduction losses
VCE(sat) classified for easy parallel connection
Ultra fast soft recovery antiparallel diode
3
2
Applications 1
Welding TO-247
High frequency converters
Power factor correction
Description Figure 1. Internal schematic diagram
The STGW35HF60WD is based on a new
advanced planar technology concept to yield an
IGBT with more stable switching performance
(Eoff) versus temperature, as well as lower
conduction losses. The device is tailored to high
switching frequency operation (over 100 kHz).
Table 1. Device summary
Order code Marking(1) Package Packaging
GW35HF60WDA
STGW35HF60WD GW35HF60WDB TO-247 Tube
GW35HF60WDC
1. Collector-emitter saturation voltage is classified in group A, B and C, see Table 5: VCE(sat) classification.
STMicroelectronics reserves the right to ship from any group according to production availability.
May 2010 Doc ID 15592 Rev 5 1/12
www.st.com 12
Electrical ratings STGW35HF60WD
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0) 600 V
(1)
IC Continuous collector current at TC = 25