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BUT11A
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s FAST SWITCHING SPEED
APPLICATIONS:
s FLYBACK AND FORWARD SINGLE 3
TRANSISTOR LOW POWER CONVERTERS 2
1
TO-220
DESCRIPTION
The BUT11A is a silicon multiepitaxial mesa NPN
transistor in Jedec TO-220 plastic package,
particularly intended for switching application.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CES Collector-Emitter Voltage (V BE = 0 V) 1000 V
V CEO Collector-Emitter Voltage (I B = 0) 450 V
V EBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 5 A
I CM Collector Peak Current 10 A
IB Base Current 2 A
I BM Base Peak Current 4 A
P tot Total Power Dissipation at T c 25 o C 83 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
June 1997 1/4
BUT11A
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CES Collector Cut-off V CE = rated V CES 1 mA
o
Current (V BE = 0) at T case = 125 C 2 mA
I EBO Emitter Cut-off Current IC = 0 V BE = 9 V 10 mA
V CEO(sus)* Collector-emitter I B (off) = 0 I C = 100 mA 450 V
Sustaining Voltage
V CE(sat)* Collector-emitter I C = 2.5 A I B = 0.5 A 1.5 V
Saturation Voltage
V BE(sat)* Base-emitter I C = 2.5 A I B = 0.5 A 1.3 V
Saturation Voltage
t on Turn on Time I C = 2.5 A V CC = 250 V 1