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A44(NPN)
TO-92 Bipolar Transistors
1. EMITTER TO-92
2. BASE
3. COLLECTOR
Features
High voltage
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.2 A
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 0.625 W
Junction Temperature
Tj 150
Storage Temperature
Tstg -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A , IE=0 400 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=400 V, IE=0 0.1 A
Collector cut-off current ICEO VCE=400 V 5 A
Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 A
hFE (1) VCE=10V , IC=10mA 80 300
hFE(2) VCE=10V, IC=1mA 70
DC current gain
hFE(3) VCE=10V, IC=100mA 40
hFE(4) VCE=10V, IC=50mA 80
VCE(sat) IC=10mA, IB=1mA 0.2 V
Collector-emitter saturation voltage
VCE(sat) IC=50mA, IB=5mA 0.3 V
Base-emitter sataration voltage VBE(sat) IC=10mA, IB= 1mA 0.75 V
VCE=20V, IC=10mA
Transition frequency fT 50 MHz
f =30MHz
CLASSIFICATION OF hFE(1)
Rank A B1 B2 C
Range 80-100 100-150 150-200 200-300
A44(NPN)
TO-92 Bipolar Transistors