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TR136
High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
3
Applications 1
2
Electronic ballast for fluorescent lighting TO-220
Electronic transformer for halogen lamps
Description
The device is manufactured using high voltage Figure 1. Internal schematic diagrams
Multi Epitaxial Planar technology for high
switching speeds. It uses a cellular emitter
structure with planar edge termination to enhance
switching speeds while maintaining a satisfactory
RBSOA.
Table 1. Device summary
Order code Marking Package Packaging
TR136 TR136 TO-220 Tube
February 2008 Rev 2 1/9
www.st.com 9
Electrical ratings TR136
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0) 9 V
IC Collector current 3 A
ICM Collector peak current (tP < 5ms) 6 A
IB Base current 1.5 A
IBM Base peak current (tP < 5ms) 3 A
Ptot Total dissipation at Tc 25