Text preview for : pbss4032sp.pdf part of Philips pbss4032sp . Electronic Components Datasheets Active components Transistors Philips pbss4032sp.pdf



Back to : pbss4032sp.pdf | Home

PBSS4032SP
30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor
Rev. 2 -- 13 October 2010 Product data sheet




1. Product profile

1.1 General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.

Table 1. Product overview
Type number Package NPN/NPN NPN/PNP
NXP Name complement complement

PBSS4032SP SOT96-1 SO8 PBSS4032SN PBSS4032SPN


1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits

1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -30 V
IC collector current - - -4.8 A
ICM peak collector current single pulse; - - -10 A
tp 1 ms
RCEsat collector-emitter IC = -4 A; IB = -0.4 A [1] - 65 98 m
saturation resistance

[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS4032SP
30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor



2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
8 5 8 7 6 5
2 base TR1
3 emitter TR2
TR1 TR2
4 base TR2
5 collector TR2 1 4 1 2 3 4
006aaa976
6 collector TR2
7 collector TR1
8 collector TR1


3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
PBSS4032SP SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1


4. Marking
Table 5. Marking codes
Type number Marking code
PBSS4032SP 4032SP


5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - -30 V
VCEO collector-emitter voltage open base - -30 V
VEBO emitter-base voltage open collector - -5 V
IC collector current - -4.8 A
ICM peak collector current single pulse; - -10 A
tp 1 ms
IB base current - -1 A
Ptot total power dissipation Tamb 25