Philips pbss4032sp free download

File name pbss4032sp.pdf

PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 -- 13 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP NXP Name complement complement PBSS4032SP SOT96-1 SO8 PBSS4032SN PBSS4032SPN 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -30 V IC collector current - - -4.8 A ICM peak collector current single pulse; - - -10 A tp 1 ms RCEsat collector-emitter IC = -4 A; IB = -0.4 A [1] - 65 98 m saturation resistance [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 emitter TR1 8 5 8 7 6 5 2 base TR1 3